03.08.2010 RLT83500G.doc 1 of 2 RLT83500G technical data high power infrared laser diode lasing wavelength: 830 nm typ. max. optical power: 500 mw, cw emitting aperture: 1x50 m2 package: 9 mm pin connection: 1) laserdiode cathode 2) laserdiode anode and photodiode cathode 3) photodiode anode specification (tc = 25c) characteristic min unit optical output power 0.5 w threshold current 0.25 a operation current 0.95 a operation voltage 2.1 v slope efficiency 0.80 w/a series resistance 0.80 ? central wavelength 830 10 nm spectral width 3 nm wavelength temperature coefficient 0.3 nm/c beam divergence 10 deg beam divergence 40 deg monitor current 400 ? 1000 ma polarization te reverse voltage 2.0 v operating temperature 10 - 30 c storage temperature -10 ? 70 c
03.08.2010 RLT83500G.doc 2 of 2 package dimensions: operating notes: 1. be sure that the operating current is not exceed the s pecified operating current, or else which will accelerate aging, shor ten lifetime or even damage devices. 2. increase the current gradually to the specified operating va lue. for shutting down the laser diode, please decrease the current to zero gradually, and then turn off the power. pleaser sure that the power suppl y have no current overshoot at any time. the current overshoot c an damage the laser diodes. 3. the high power laser diode is sensitiv e to the work temperature. the work temperature should be no more than 30c. it is better if the temperature of the heat sink can be keep at 20c. 4. be careful to keep the facet cleaning. co ntamination of facet will result in rapid degradation of devices. 5. the high power laser diode is very sensit ive to static. please caution about static during operating with the laser diode. 6. caution! don?t look at the laser light directly, because it?s harmful to eyes. 7. a clean, dry and ventilat ed environment should be av ailable when storing and operation. dew can damage the laser diodes. 8. the storage temperatur e is between ?10 and 70c.
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